Next Generation Transistor Market, by Type (High Electron Mobility Transistor (HEMT), Bipolar Junction Transistor (BJT), Field Effect Transistors (FET), Multiple Emitter Transistor (MET), Dual Gate Metal Oxide Semiconductor Field Effective Transistor), by Application (Aerospace & Defense, Industrial, Telecommunications, Consumer Electronics), Regional Analysis (North America, Europe, Asia-Pacific, LAMEA) – Global Opportunity Analysis and Industry Forecast, 2019–2026

Global Next Generation Transistor Market Overview 2026:

Transistors are without a doubt a major component in various devices that are an essential part in various industries. Moreover, the consumers are increasingly getting associated with the next generation transistors, this is majorly due to the growing adoption of devices with the minimal sizes and that are easy to carry as well as use. Over 3.5 billion individuals are using internet services, with 54% of houses having internet installed with worldwide broadband memberships. These key factors have tripled the membership subscriptions in recent times. Additionally, rising number of data centers globally to analyze and predict the increasing requirement for improving client experience as well.

In the past two decades, the compact size of silicon transistors, reaching the nanometer scale have increased the consumption of electronics. As Complementary Metal–Oxide–Semiconductor (CMOS) remains to decrease over a specific point, whereas the dependability of the transistors has increased in the recent years. To surpass the limitations of silicon, new materials which can carry high velocities are being manufactured to support the Next-Generation Transistors.

Huge investments by the key players is the key factor driving the Global Next Generation Transistor Market

Next Generation Transistor market is estimated to grow at a faster pace over the projected period; this is majorly due to the growing research and development trend and slow rollout of new and coming of age transistors. On the other hand, technological developments are expected to rise due to increasing device requirements which is anticipated to be a major factor for the growth of Next Generation Transistor Market.

Manufacturers are investing huge to invent a suitable substitute for traditional products to fulfil the customer’s need. Moore's law is being used for decades which helps in minimizing the dimension of the wafer, further compacting the components along with improving the device density.

Lack of appropriate technique to enable the 2.5 and 1.5 nodes is expected restrain the next Generation Transistor Market growth over the forecast period

Lithography technique is required to manufacture the next generation transistors that may size beyond 3nm. This process also helps in enabling the nodes of the chipsets. However, there are few factors that may hamper the process of lithography as this process in inefficient in masking and enabling the nodes for the chips and transistors whose sizes are beyond 3nm.  Due to the sizes of transistors being in nanometers the manufacturers are not able to address the defects efficiently. The key players are forced to develop a technique which has the ability to enable the nodes for 2.5nm and 1.5nm as well. This factor is expected to hamper the next generation Transistor Market growth in the near future.

Next Generation Transistor Market, by Type:

HEMT segment is predicted to be most lucrative till the end of 2026

High Electron Mobility Transistor (HEMT) is the first to adopt the nanometer (nm) technology for integration of many devices in a single chip. The key factors driving the HEMT segment are, HEMT have high gain, due to which these transistors can be used as amplifiers as well. The high switching speeds, which are attained due to the main charge carriers in Modulation-Doped Field-Effect Transistor (MODFETs) that are majority carriers, and minority carriers are not considerably involved. In addition to aforementioned factors the low noise values due to the current fluctuations in these devices is very low compared to other FETs.

Next Generation Transistor Market, by Application:

The aerospace and defense industry offer good growth opportunity till the end of 2026

The application segment on the basis of next generation transistor market is divided into Aerospace & Defense, Industrial, Telecommunications, Consumer Electronics and others.  The consumer electronics segment is expected to lead the market in 2018, however the consumer electronics segment will dominate the global next generation transistor market during the forecast period. This growth is majorly due to the rapid growth in the adoption of consumer electronics across the globe as well as the people preferences growing towing the adoption of thin electronics.

Regional Growth of Next Generation Transistor Market: 

The Asia-Pacific regional market will provide an ample of opportunities for the investors over the coming years

The Electrical and Electronics industry in the developing countries of the Asia-Pacific region is having a significant impact on the GDP of countries such as China, India, and South Korea.  The Asia-Pacific region is an electronics hub with around billions of electronic devices that are being manufactured every year for the consumption specifically in this region. However, Asia-Pacific region plays a major role in exporting the electronic components across the globe. The rapid growth in the consumer’s electronics market in this region is the key growth factor for the Asia-Pacific region in Global Next Generation Transistor Market.

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Key players in the Next Generation Transistors Market:

Product development and joint ventures are the most common strategies followed by the market players

Source: Research Dive Analysis

Key next generation transistor market players include Infineon Technologies, ST Microelectronics, Avago Technologies, Texas Instruments, Focus Microwave, TriQuint Semiconductor, Advance Linear Devices, Inc., Deveo Oy, Axcera, and Fairchild Semiconductors. These key players are majorly concentrating growth advancements in current technologies, new product launches, mergers and acquisitions, and geographical expansion. In September 2018, NXP Semiconductors N.V. declared about the promotion of a new radio frequency (RF) power transistors that was specifically manufactured for smart industrial applications, containing the innovative 65 V laterally diffused metal oxide semiconductor (LDMOS) silicon technology.
 

Source: Research Dive Analysis